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 *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP1070H3BJ THRU TISP1120H3BJ DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP1xxxH3BJ Overvoltage Protector Series
Overvoltage Protection for Negative Rail SLICs Dual High Current Protectors in a Space Efficient Package - 2 x 100 A 10/1000 Current Rating - SMB03 Package (3-pin Modified SMB/DO-214AA) 50 % Space Saving over Two SMBs Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge
Device Name TISP1070H3BJ TISP1080H3BJ TISP1095H3BJ TISP1120H3BJ VDRM V -58 -65 -75 -95 V(BO) V -70 -80 -95 -120
SMB03 Package (Top View)
1 2 3
MDXXCJA
Device Symbol
1 (T or R) 3 (R or T)
Rated for International Surge Wave Shapes
Wave Shape 2/10 8/20 10/160 10/700 10/560 10/1000 Standard GR-1089-CORE IEC 61000-4-5 TIA-968-A (FCC Part 68) ITU-T K.20/21/45 TIA-968-A (FCC Part 68) GR-1089-CORE IPPSM A 500 300 200 150 120 100
2 (G)
SD1TAA
............................................... UL Recognized Component
Description
These dual unidirectional thyristor devices protect SLICs and ISDN power feeds in central office, access and customer premises equipment against overvoltages on the telecom line. Each protector section consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. In the negative polarity, the thyristor allows signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages exceeding VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the thyristor switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the thyristor. When the diverted current falls below the holding current, IH, level the thyristor switches off and restores normal system operation. Positive overvoltages are limited by the conduction of the anti-parallel diode. The TISP1xxxH3BJ is available in four voltages and has a 100 A 10/1000 current rating. These protectors have been designed particularly for use in equipment that must meet the following standards and recommendations: GR-1089-CORE, TIA-968-A (replaces FCC Part 68), ITU-T K.20, K.21 and K.45. Housed in a SMB03 package (3-pin modified SMB/DO-214AA), these parts are space efficient to replace protection designs of 100 A 10/1000 or less which use multiple SMBs or a 6-pin SMT package.
How to Order
For Standard Termination Finish Order As For Lead Free Termination Finish Order As
TISP1xxxH3BJR-S
Device
Package
Carrier
Marking Code Std. Qty. 1xxxH3 3000
TISP1xxxH3BJ SMB03 (3-pin modified SMB /DO-214AA)
Embossed Tape Reeled TISP1xxxH3BJR
Insert xxx value corresponding to device name.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted)
Rating '1070 Repetitive peak off-state voltage, (Terminals 1-2 and 3-2) (see Note 1) '1080 '1095 '1120 Non-repetitive peak on-state pulse current (see Notes 2 and 3) 2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 10/160 (TIA-968-A (replaces FCC Part 68), 10/160 s voltage wave shape) 5/310 (ITU-T K.44, 10/700 s voltage wave shape used in K.20/45/21) 5/320 (TIA-968-A (replaces FCC Part 68), 9/720 s voltage wave shape) 10/560 (TIA-968-A (replaces FCC Part 68), 10/560 s voltage wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 cycle 60 Hz, 1 cycle 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range Linear current ramp, Maximum ramp value < 50 A diT/dt TJ Tstg ITSM 2x30 2x35 2x1.2 500 -40 to +150 -65 to +150 A/s C C A IPPSM 2x500 2x300 2x200 2x150 2x150 2x120 2x100 A VDRM Symbol Value -58 -65 -75 -95 V Unit
NOTES: 1. At -40 C derate linearly to 0.93 x V DRM (25 C) 2. Initially the device must be in thermal equilibrium with T J = 25 C. 3. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and 3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The surge may be repeated after the device returns to its initial conditions.
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter IDRM Repetitive peak offstate current VD = VDRM Test Conditions TA = 25 C TA = 85 C '1070 V(BO) AC breakover voltage dv/dt = -250 V/ms, RSOURCE = 300 '1080 '1095 '1120 I(BO) IH dv/dt ID VF Breakover current Holding current Critical rate of rise of off-state voltage Off-state current Forward voltage dv/dt = -250 V/ms, RSOURCE = 300 -150 -5 TA = 85 C -10 3 Min Typ Max -5 -10 -70 -80 -95 -120 -800 mA mA kV/s A V V Unit A
IT = -5 A, di/dt = +30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85 x VDRM VD = -50 V IF = +5 A, tW = 500 s
JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 C (Unless Otherwise Noted)
Parameter Test Conditions '1070 f = 1 MHz, Coff Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -50 V Vd = 1 V rms, VD = -2 V '1080 '1095 '1120 '1070 '1080 '1095 '1120 Min Typ 161 152 139 116 58 55 50 42 pF Max Unit
Thermal Characteristics
Parameter Test Conditions EIA/JESD51-3 PCB, TA = 25 C, (see Note 4) R JA Junction to free air thermal resistance 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) , TA = 25 C 52 Min Typ Max 113 C/W Unit
NOTE 4: EIA/JESD51-2 environment and PCB have standard footprint dimensions connected with 5 A rated printed wiring track widths.
JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Parameter Measurement Information
+i IPPSM Quadrant I Forward Conduction Characteristic
IFSM IF VF
V DRM -v IDRM
VD ID
+v
I(BO)
IH
V(BO)
VT IT ITSM
Quadrant III Switching Characteristic IPPSM -i
PMXXACd
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2 All Measurements are Referenced to Terminal 2
+i IPPSM Quadrant I Switching Characteristic
ITSM IT VT IH I(BO) V(BO)
-v IDRM
V DRM
VD
ID ID VD V DRM
IDRM +v
I(BO) V(BO)
IH VT IT ITSM
Quadrant III Switching Characteristic IPPSM -i
PM4XAG
Figure 2. Voltage-Current Characteristic for Terminal Pair 1-3 All Measurements are Referenced to Terminal 3
JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP1xxxH3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100
TC-TC3xx-001-a
1.10
NORMALIZED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC-TC3xx-002-a
Normalized Breakover Voltage 150
10 ID - Off-State Current - A
1.05
1
0.1 1 V D = -50 V 0.01
1.00
0.001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 3.
Figure 4.
ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES
IT , IF - On-State Current, Forward Current - A 200 150 100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7 1 1.5 2 3 45 7 10 V T , V F- On-State Voltage, Forward Voltage - V VF VT
2.0
TA = 25 C tW < 100 s
NORMALIZED HOLDING CURRENT vs JUNCTION TEMPERATURE TC-TC3xx-004-a
1.5 Normalized Holding Current
1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 5.
JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Figure 6.
TISP1xxxH3BJ Overvoltage Protector Series
Typical Characteristics (Continued)
NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE
1.5
TC-TC3xx-005-a
Capacitance Normalized to V D = -2
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3
TJ = 25C V d = 1 Vrms
0.2 1 2 3 5 10 20 30 V D - Negative Off-state Voltage - V 50
Figure 7.
Rating and Thermal Information
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
30 ITSM(t) - Non-Repetitive Peak On-State Current - A 20 15 10 9 8 7 6 5 4 3 2 1.5 1 0.1
TI-TC3xx-001-a
V GEN = 600 Vrms, 50/60 Hz RGEN = 1.4*V GEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 C SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t)
1
10
100
1000
t - Current Duration - s
Figure 8.
JUNE 2003 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
Bourns Sales Offices Region The Americas: Europe: Asia-Pacific: Phone +1-909-781-5500 +1-951-781-5500 +41 (0)41-7685555 +886-2-25624117 Fax +1-909-781-5700 +1-951-781-5700 (after 7/17/04) +41 (0)41-7685510 +886-2-25624116
Technical Assistance Region The Americas: Europe: Asia-Pacific: Phone +1-909-781-5500 +1-951-781-5500 +41 (0)41-7685555 +886-2-25624117 Fax +1-909-781-5700 +1-951-781-5700 (after 7/17/04) +41 (0)41-7685510 +886-2-25624116
www.bourns.com
Bourns (R) products are available through an extensive network of manufacturer's representatives, agents and distributors. To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
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COPYRIGHT(c) 2004, BOURNS, INC. LITHO IN U.S.A. e 05/04/TSP0332


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